Reduction of surface recombination losses in micro-LEDs

ABSTRACT

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/369,076, filed on Mar. 29, 2019, which is a continuation-in-partapplication of U.S. patent application Ser. No. 15/969,523, filed on May2, 2018, now U.S. Pat. No. 10,468,552, issued on Nov. 5, 2019, whichclaims priority under 35 U.S.C. § 119 to U.S. Provisional PatentApplication No. 62/651,044, filed on Mar. 30, 2018, the contents ofwhich are hereby incorporated by reference in their entireties.

BACKGROUND

A micro-LED has a very small chip size. For example, a linear dimensionof the chip may be less than 50 μm or less than 10 μm. The lineardimension may be as small as 2 μm or 4 μm.

Lateral diffusion of electrons may reduce the efficiency of micro-LEDs.When current is injected into an LED, electrons diffuse in manydirections. Because of the small size of micro-LEDs, most of theelectrons are lost at an interface of the micro-LED in a process knownas surface recombination. These lost electrons cannot contribute to thegeneration of light by the micro-LED. This effect becomes especiallypronounced when the diffusion length of the electrons approaches thelinear dimension of the chip of the micro-LED.

SUMMARY

The present disclosure generally relates to reducing surfacerecombination losses in micro-LEDs. In some embodiments, a methodincludes increasing a bandgap in an outer region of a semiconductorlayer by implanting ions in the outer region of the semiconductor layerand subsequently annealing the outer region of the semiconductor layerto intermix the ions with atoms within the outer region of thesemiconductor layer. The semiconductor layer includes an active lightemitting layer. A light outcoupling surface of the semiconductor layerhas a diameter of less than 10 μm. The outer region of the semiconductorlayer extends from an outer surface of the semiconductor layer to acentral region of the semiconductor layer that is shaded by a maskduring the implanting of the ions.

The semiconductor layer may also include an n-side semiconductor layeradjacent to the light outcoupling surface and a p-side semiconductorlayer opposite to the active light emitting layer. The ions may beimplanted from a top surface of the p-side semiconductor layer to adepth of approximately 460 nm within the semiconductor layer.Alternatively or in addition, the ions may be implanted from a topsurface of the p-side semiconductor layer to a depth within the activelight emitting layer.

The ions may include Al ions. A concentration of Al in the outer regionof the semiconductor layer may be between 0.3 and 0.5. The ions may havean implantation energy of approximately 400 keV. The ions may beimplanted at an angle between 0° and 7° with respect to an axis that isnormal to a plane of the mask.

The mask may include a metal, a resist, and/or a hard mask. The metalmay have a thickness of less than 1000 nm, the resist may have athickness of less than 2500 nm, and the hard mask may have a thicknessof less than 800 nm. The outer region of the semiconductor layer mayhave a cross-sectional annular shape.

In some embodiments, a light-emitting diode may include a semiconductorlayer having an active light emitting layer. A light outcoupling surfaceof the semiconductor layer has a diameter of less than 10 μm. A bandgapin an outer region of the semiconductor layer is greater than a bandgapin a central region of the semiconductor layer. The outer region of thesemiconductor layer includes ions that are implanted in the outer regionof the semiconductor layer and intermixed with atoms within the outerregion of the semiconductor layer. The light-emitting diode may beformed by the method discussed above.

This summary is neither intended to identify key or essential featuresof the claimed subject matter, nor is it intended to be used inisolation to determine the scope of the claimed subject matter. Thesubject matter should be understood by reference to appropriate portionsof the entire specification of this disclosure, any or all drawings, andeach claim. The foregoing, together with other features and examples,will be described in more detail below in the following specification,claims, and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative embodiments are described in detail below with reference tothe following figures:

FIG. 1 is a simplified block diagram of an example artificial realitysystem environment including a near-eye display, according to certainembodiments;

FIG. 2 is a perspective view of a simplified example near-eye displayincluding various sensors;

FIG. 3 is a perspective view of an example near-eye display in the formof a head-mounted display (HMD) device for implementing some of theexamples disclosed herein;

FIG. 4 is a simplified block diagram of an example electronic system ofan example near-eye display for implementing some of the examplesdisclosed herein;

FIGS. 5A, 5B, 6A, and 6B illustrate a method of reducing surfacerecombination by passivating the surface of a semiconductor layer of amicro-LED;

FIG. 7 shows an array of micro-LEDs that have been passivated accordingto some of the examples disclosed herein;

FIG. 8 illustrates a method of reducing lateral carrier mobility andsurface recombination by using ion implantation to disrupt thesemiconductor lattice outside of a central portion of the micro-LED;

FIGS. 9A and 9B show various ion implantation depths for differentmicro-LEDs;

FIG. 10 shows additional details of the example micro-LED shown in FIG.9A;

FIGS. 11A and 11B show simulations of various ion distributions for theexample micro-LED shown in FIG. 9B;

FIGS. 12A-12C show simulations of additional ion distributions for theexample micro-LED shown in FIG. 9B;

FIGS. 13A and 13B show tables of results of ion implantation for theexample micro-LED 905 shown in FIG. 9B;

FIGS. 14A-14H show simulations of the mask thicknesses that are neededto achieve different ion implantation depths;

FIGS. 15A and 15B illustrate a method of reducing lateral carriermobility and surface recombination by using quantum well intermixing tochange the composition of areas of the semiconductor layer outside ofthe central portion of the micro-LED; and

FIGS. 16A-16C show simulations of various ion distributions for theexample micro-LED shown in FIG. 15B.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, specificdetails are set forth in order to provide a thorough understanding ofexamples of the disclosure. However, it will be apparent that variousexamples may be practiced without these specific details. For example,devices, systems, structures, assemblies, methods, and other componentsmay be shown as components in block diagram form in order not to obscurethe examples in unnecessary detail. In other instances, well-knowndevices, processes, systems, structures, and techniques may be shownwithout necessary detail in order to avoid obscuring the examples. Thefigures and description are not intended to be restrictive. The termsand expressions that have been employed in this disclosure are used asterms of description and not of limitation, and there is no intention inthe use of such terms and expressions of excluding any equivalents ofthe features shown and described or portions thereof.

An artificial reality system, such as a virtual reality (VR), augmentedreality (AR), or mixed reality (MR) system, may include a near-eyedisplay (e.g., a headset or a pair of glasses) configured to presentcontent to a user via an electronic or optic display and, in some cases,may also include a console configured to generate content forpresentation to the user and to provide the generated content to thenear-eye display for presentation. To improve user interaction withpresented content, the console may modify or generate content based on alocation where the user is looking, which may be determined by trackingthe user's eye. Tracking the eye may include tracking the positionand/or shape of the pupil of the eye, and/or the rotational position(gaze direction) of the eye. To track the eye, the near-eye display mayilluminate a surface of the user's eye using light sources mounted to orwithin the near-eye display, according to at least one embodiment. Animaging device (e.g., a camera) included in the vicinity of the near-eyedisplay may then capture light reflected by various surfaces of theuser's eye. Light that is reflected specularly off the cornea of theuser's eye may result in “glints” in the captured image. One way toilluminate the eye to see the pupil as well as the glints is to use atwo-dimensional (2D) array of light-emitting diodes (LEDs). Techniquessuch as a centroiding algorithm may be used to accurately determine thelocations of the glints on the eye in the captured image, and therotational position (e.g., the gaze direction) of the eye may then bedetermined based on the locations of the glints relative to a knownfeature of the eye (e.g., the center of the pupil) within the capturedimage.

FIG. 1 is a simplified block diagram of an example artificial realitysystem environment 100 including a near-eye display 120, in accordancewith certain embodiments. Artificial reality system environment 100shown in FIG. 1 may include a near-eye display 120, an external imagingdevice 150, and an input/output interface 140 that are each coupled to aconsole 110. While FIG. 1 shows example artificial reality systemenvironment 100 including one near-eye display 120, one external imagingdevice 150, and one input/output interface 140, any number of thesecomponents may be included in artificial reality system environment 100,or any of the components may be omitted. For example, there may bemultiple near-eye displays 120 monitored by one or more external imagingdevices 150 in communication with console 110. In alternativeconfigurations, different or additional components may be included inartificial reality system environment 100.

Near-eye display 120 may be a head-mounted display that presents contentto a user. Examples of content presented by near-eye display 120 includeone or more of images, videos, audios, or some combination thereof. Insome embodiments, audio may be presented via an external device (e.g.,speakers and/or headphones) that receives audio information fromnear-eye display 120, console 110, or both, and presents audio databased on the audio information. Near-eye display 120 may include one ormore rigid bodies, which may be rigidly or non-rigidly coupled to eachother. A rigid coupling between rigid bodies may cause the coupled rigidbodies to act as a single rigid entity. A non-rigid coupling betweenrigid bodies may allow the rigid bodies to move relative to each other.In various embodiments, near-eye display 120 may be implemented in anysuitable form factor, including a pair of glasses. Additionally, invarious embodiments, the functionality described herein may be used in aheadset that combines images of an environment external to near-eyedisplay 120 and content received from console 110, or from any otherconsole generating and providing content to a user. Therefore, near-eyedisplay 120, and methods for eye tracking described herein, may augmentimages of a physical, real-world environment external to near-eyedisplay 120 with generated content (e.g., images, video, sound, etc.) topresent an augmented reality to a user.

In various embodiments, near-eye display 120 may include one or more ofdisplay electronics 122, display optics 124, one or more locators 126,one or more position sensors 128, an eye-tracking unit 130, and aninertial measurement unit (IMU) 132. Near-eye display 120 may omit anyof these elements or include additional elements in various embodiments.Additionally, in some embodiments, near-eye display 120 may includeelements combining the function of various elements described inconjunction with FIG. 1.

Display electronics 122 may display images to the user according to datareceived from console 110. In various embodiments, display electronics122 may include one or more display panels, such as a liquid crystaldisplay (LCD), an organic light emitting diode (OLED) display, amicro-LED display, an active-matrix OLED display (AMOLED), a transparentOLED display (TOLED), or some other display. For example, in oneimplementation of near-eye display 120, display electronics 122 mayinclude a front TOLED panel, a rear display panel, and an opticalcomponent (e.g., an attenuator, polarizer, or diffractive or spectralfilm) between the front and rear display panels. Display electronics 122may include sub-pixels to emit light of a predominant color such as red,green, blue, white, or yellow. In some implementations, displayelectronics 122 may display a 3D image through stereo effects producedby two-dimensional panels to create a subjective perception of imagedepth. For example, display electronics 122 may include a left displayand a right display positioned in front of a user's left eye and righteye, respectively. The left and right displays may present copies of animage shifted horizontally relative to each other to create astereoscopic effect (i.e., a perception of image depth by a user viewingthe image).

In certain embodiments, display optics 124 may display image contentoptically (e.g., using optical waveguides and couplers), or magnifyimage light received from display electronics 122, correct opticalerrors associated with the image light, and present the corrected imagelight to a user of near-eye display 120. In various embodiments, displayoptics 124 may include one or more optical elements. Example opticalelements may include a substrate, optical waveguides, an aperture, aFresnel lens, a convex lens, a concave lens, a filter, or any othersuitable optical element that may affect image light emitted fromdisplay electronics 122. Display optics 124 may include a combination ofdifferent optical elements as well as mechanical couplings to maintainrelative spacing and orientation of the optical elements in thecombination. One or more optical elements in display optics 124 may havean optical coating, such as an anti-reflective coating, a reflectivecoating, a filtering coating, or a combination of different opticalcoatings.

Magnification of the image light by display optics 124 may allow displayelectronics 122 to be physically smaller, weigh less, and consume lesspower than larger displays. Additionally, magnification may increase afield of view of the displayed content. In some embodiments, displayoptics 124 may have an effective focal length larger than the spacingbetween display optics 124 and display electronics 122 to magnify imagelight projected by display electronics 122. The amount of magnificationof image light by display optics 124 may be adjusted by adding orremoving optical elements from display optics 124.

Display optics 124 may be designed to correct one or more types ofoptical errors, such as two-dimensional optical errors,three-dimensional optical errors, or a combination thereof.Two-dimensional errors may include optical aberrations that occur in twodimensions. Example types of two-dimensional errors may include barreldistortion, pincushion distortion, longitudinal chromatic aberration,and transverse chromatic aberration. Three-dimensional errors mayinclude optical errors that occur in three dimensions. Example types ofthree-dimensional errors may include spherical aberration, comaticaberration, field curvature, and astigmatism. In some embodiments,content provided to display electronics 122 for display may bepre-distorted, and display optics 124 may correct the distortion when itreceives image light from display electronics 122 generated based on thepre-distorted content.

Locators 126 may be objects located in specific positions on near-eyedisplay 120 relative to one another and relative to a reference point onnear-eye display 120. Console 110 may identify locators 126 in imagescaptured by external imaging device 150 to determine the artificialreality headset's position, orientation, or both. A locator 126 may be alight emitting diode (LED), a corner cube reflector, a reflectivemarker, a type of light source that contrasts with an environment inwhich near-eye display 120 operates, or some combinations thereof Inembodiments where locators 126 are active components (e.g., LEDs orother types of light emitting devices), locators 126 may emit light inthe visible band (e.g., about 380 nm to 750 nm), in the near infrared(IR) band (e.g., about 750 nm to 1 mm), in the mid-infrared (IR) band(e.g., about 1 μm to about 20 μm), in the ultraviolet band (e.g., about10 nm to about 380 nm), in another portion of the electromagneticspectrum, or in any combination of portions of the electromagneticspectrum.

In some embodiments, locators 126 may be located beneath an outersurface of near-eye display 120. A portion of near-eye display 120between a locator 126 and an entity external to near-eye display 120(e.g., external imaging device 150, a user viewing the outer surface ofnear-eye display 120) may be transparent to the wavelengths of lightemitted or reflected by locators 126 or is thin enough to notsubstantially attenuate the light emitted or reflected by locators 126.In some embodiments, the outer surface or other portions of near-eyedisplay 120 may be opaque in the visible band, but is transparent in theIR band, and locators 126 may be under the outer surface and may emitlight in the IR band.

External imaging device 150 may generate slow calibration data based oncalibration parameters received from console 110. Slow calibration datamay include one or more images showing observed positions of locators126 that are detectable by external imaging device 150. External imagingdevice 150 may include one or more cameras, one or more video cameras,any other device capable of capturing images including one or more oflocators 126, or some combinations thereof. Additionally, externalimaging device 150 may include one or more filters (e.g., to increasesignal to noise ratio). External imaging device 150 may be configured todetect light emitted or reflected from locators 126 in a field of viewof external imaging device 150. In embodiments where locators 126include passive elements (e.g., retroreflectors), external imagingdevice 150 may include a light source that illuminates some or all oflocators 126, which may retro-reflect the light to the light source inexternal imaging device 150. Slow calibration data may be communicatedfrom external imaging device 150 to console 110, and external imagingdevice 150 may receive one or more calibration parameters from console110 to adjust one or more imaging parameters (e.g., focal length, focus,frame rate, sensor temperature, shutter speed, aperture, etc.).

Position sensors 128 may generate one or more measurement signals inresponse to motion of near-eye display 120. Examples of position sensors128 may include accelerometers, gyroscopes, magnetometers, othermotion-detecting or error-correcting sensors, or some combinationsthereof. For example, in some embodiments, position sensors 128 mayinclude multiple accelerometers to measure translational motion (e.g.,forward/back, up/down, or left/right) and multiple gyroscopes to measurerotational motion (e.g., pitch, yaw, or roll). In some embodiments,various position sensors may be oriented orthogonally to each other.

IMU 132 may be an electronic device that generates fast calibration databased on measurement signals received from one or more of positionsensors 128. Position sensors 128 may be located external to IMU 132,internal to IMU 132, or some combination thereof. Based on the one ormore measurement signals from one or more position sensors 128, IMU 132may generate fast calibration data indicating an estimated position ofnear-eye display 120 relative to an initial position of near-eye display120. For example, IMU 132 may integrate measurement signals receivedfrom accelerometers over time to estimate a velocity vector andintegrate the velocity vector over time to determine an estimatedposition of a reference point on near-eye display 120. Alternatively,IMU 132 may provide the sampled measurement signals to console 110,which may determine the fast calibration data. While the reference pointmay generally be defined as a point in space, in various embodiments,the reference point may also be defined as a point within near-eyedisplay 120 (e.g., a center of IMU 132).

Eye-tracking unit 130 may include one or more imaging devices configuredto capture eye tracking data, which an eye-tracking module 118 inconsole 110 may use to track the user's eye. Eye tracking data may referto data output by eye-tracking unit 130. Example eye tracking data mayinclude images captured by eye-tracking unit 130 or information derivedfrom the images captured by eye-tracking unit 130. Eye tracking mayrefer to determining an eye's position, including orientation andlocation of the eye, relative to near-eye display 120. For example,eye-tracking module 118 may output the eye's pitch and yaw based onimages of the eye captured by eye-tracking unit 130. In variousembodiments, eye-tracking unit 130 may measure electromagnetic energyreflected by the eye and communicate the measured electromagnetic energyto eye-tracking module 118, which may then determine the eye's positionbased on the measured electromagnetic energy. For example, eye-trackingunit 130 may measure electromagnetic waves such as visible light,infrared light, radio waves, microwaves, waves in any other part of theelectromagnetic spectrum, or a combination thereof reflected by an eyeof a user.

Eye-tracking unit 130 may include one or more eye-tracking systems. Aneye-tracking system may include an imaging system to image one or moreeyes and may optionally include a light emitter, which may generatelight that is directed to an eye such that light reflected by the eyemay be captured by the imaging system. For example, eye-tracking unit130 may include a coherent light source (e.g., a VCSEL) emitting lightin the visible spectrum or infrared spectrum, and a camera capturing thelight reflected by the user's eye. As another example, eye-tracking unit130 may capture reflected radio waves emitted by a miniature radar unit.Eye-tracking unit 130 may use low-power light emitters that emit lightat frequencies and intensities that would not injure the eye or causephysical discomfort. Eye-tracking unit 130 may be arranged to increasecontrast in images of an eye captured by eye-tracking unit 130 whilereducing the overall power consumed by eye-tracking unit 130 (e.g.,reducing power consumed by a light emitter and an imaging systemincluded in eye-tracking unit 130). For example, in someimplementations, eye-tracking unit 130 may consume less than 100milliwatts of power.

In some embodiments, eye-tracking unit 130 may include one light emitterand one camera to track each of the user's eyes. In other embodiments,eye-tracking unit 130 may include a plurality of light emitters and onecamera to track each of the user's eyes. Eye-tracking unit 130 may alsoinclude different eye-tracking systems that operate together to provideimproved eye tracking accuracy and responsiveness. For example,eye-tracking unit 130 may include a fast eye-tracking system with a fastresponse time and a slow eye-tracking system with a slower responsetime. The fast eye-tracking system may frequently measure an eye tocapture data used by eye-tracking module 118 to determine the eye'sposition relative to a reference eye position. The slow eye-trackingsystem may independently measure the eye to capture data used byeye-tracking module 118 to determine the reference eye position withoutreference to a previously determined eye position. Data captured by theslow eye-tracking system may allow eye-tracking module 118 to determinethe reference eye position with greater accuracy than the eye's positiondetermined from data captured by the fast eye-tracking system. Invarious embodiments, the slow eye-tracking system may provideeye-tracking data to eye-tracking module 118 at a lower frequency thanthe fast eye-tracking system. For example, the slow eye-tracking systemmay operate less frequently or have a slower response time to conservepower.

Eye-tracking unit 130 may be configured to estimate the orientation ofthe user's eye. The orientation of the eye may correspond to thedirection of the user's gaze within near-eye display 120. Theorientation of the user's eye may be defined as the direction of thefoveal axis, which is the axis between the fovea (an area on the retinaof the eye with the highest concentration of photoreceptors) and thecenter of the eye's pupil. In general, when a user's eyes are fixed on apoint, the foveal axes of the user's eyes intersect that point. Thepupillary axis of an eye may be defined as the axis that passes throughthe center of the pupil and is perpendicular to the corneal surface. Ingeneral, even though the pupillary axis and the foveal axis intersect atthe center of the pupil, the pupillary axis may not directly align withthe foveal axis. For example, the orientation of the foveal axis may beoffset from the pupillary axis by approximately −1° to 8° laterally andabout ±4° vertically. Because the foveal axis is defined according tothe fovea, which is located in the back of the eye, the foveal axis maybe difficult or impossible to measure directly in some eye trackingembodiments. Accordingly, in some embodiments, the orientation of thepupillary axis may be detected and the foveal axis may be estimatedbased on the detected pupillary axis.

In general, the movement of an eye corresponds not only to an angularrotation of the eye, but also to a translation of the eye, a change inthe torsion of the eye, and/or a change in the shape of the eye.Eye-tracking unit 130 may also be configured to detect the translationof the eye, which may be a change in the position of the eye relative tothe eye socket. In some embodiments, the translation of the eye may notbe detected directly, but may be approximated based on a mapping from adetected angular orientation. Translation of the eye corresponding to achange in the eye's position relative to the eye-tracking unit may alsobe detected. Translation of this type may occur, for example, due to ashift in the position of near-eye display 120 on a user's head.Eye-tracking unit 130 may also detect the torsion of the eye and therotation of the eye about the pupillary axis. Eye-tracking unit 130 mayuse the detected torsion of the eye to estimate the orientation of thefoveal axis from the pupillary axis. Eye-tracking unit 130 may alsotrack a change in the shape of the eye, which may be approximated as askew or scaling linear transform or a twisting distortion (e.g., due totorsional deformation). Eye-tracking unit 130 may estimate the fovealaxis based on some combinations of the angular orientation of thepupillary axis, the translation of the eye, the torsion of the eye, andthe current shape of the eye.

In some embodiments, eye-tracking unit 130 may include multiple emittersor at least one emitter that can project a structured light pattern onall portions or a portion of the eye. The structured light pattern maybe distorted due to the shape of the eye when viewed from an offsetangle. Eye-tracking unit 130 may also include at least one camera thatmay detect the distortions (if any) of the structured light patternprojected onto the eye. The camera may be oriented on a different axisto the eye than the emitter. By detecting the deformation of thestructured light pattern on the surface of the eye, eye-tracking unit130 may determine the shape of the portion of the eye being illuminatedby the structured light pattern. Therefore, the captured distorted lightpattern may be indicative of the 3D shape of the illuminated portion ofthe eye. The orientation of the eye may thus be derived from the 3Dshape of the illuminated portion of the eye. Eye-tracking unit 130 canalso estimate the pupillary axis, the translation of the eye, thetorsion of the eye, and the current shape of the eye based on the imageof the distorted structured light pattern captured by the camera.

Near-eye display 120 may use the orientation of the eye to, e.g.,determine an inter-pupillary distance (IPD) of the user, determine gazedirection, introduce depth cues (e.g., blur image outside of the user'smain line of sight), collect heuristics on the user interaction in theVR media (e.g., time spent on any particular subject, object, or frameas a function of exposed stimuli), some other functions that are basedin part on the orientation of at least one of the user's eyes, or somecombination thereof. Because the orientation may be determined for botheyes of the user, eye-tracking unit 130 may be able to determine wherethe user is looking. For example, determining a direction of a user'sgaze may include determining a point of convergence based on thedetermined orientations of the user's left and right eyes. A point ofconvergence may be the point where the two foveal axes of the user'seyes intersect (or the nearest point between the two axes). Thedirection of the user's gaze may be the direction of a line passingthrough the point of convergence and the mid-point between the pupils ofthe user's eyes.

Input/output interface 140 may be a device that allows a user to sendaction requests to console 110. An action request may be a request toperform a particular action. For example, an action request may be tostart or to end an application or to perform a particular action withinthe application. Input/output interface 140 may include one or moreinput devices. Example input devices may include a keyboard, a mouse, agame controller, a glove, a button, a touch screen, or any othersuitable device for receiving action requests and communicating thereceived action requests to console 110. An action request received bythe input/output interface 140 may be communicated to console 110, whichmay perform an action corresponding to the requested action. In someembodiments, input/output interface 140 may provide haptic feedback tothe user in accordance with instructions received from console 110. Forexample, input/output interface 140 may provide haptic feedback when anaction request is received, or when console 110 has performed arequested action and communicates instructions to input/output interface140.

Console 110 may provide content to near-eye display 120 for presentationto the user in accordance with information received from one or more ofexternal imaging device 150, near-eye display 120, and input/outputinterface 140. In the example shown in FIG. 1, console 110 may includean application store 112, a headset tracking module 114, a virtualreality engine 116, and eye-tracking module 118. Some embodiments ofconsole 110 may include different or additional modules than thosedescribed in conjunction with FIG. 1. Functions further described belowmay be distributed among components of console 110 in a different mannerthan is described here.

In some embodiments, console 110 may include a processor and anon-transitory computer-readable storage medium storing instructionsexecutable by the processor. The processor may include multipleprocessing units executing instructions in parallel. Thecomputer-readable storage medium may be any memory, such as a hard diskdrive, a removable memory, or a solid-state drive (e.g., flash memory ordynamic random access memory (DRAM)). In various embodiments, themodules of console 110 described in conjunction with FIG. 1 may beencoded as instructions in the non-transitory computer-readable storagemedium that, when executed by the processor, cause the processor toperform the functions further described below.

Application store 112 may store one or more applications for executionby console 110. An application may include a group of instructions that,when executed by a processor, generates content for presentation to theuser. Content generated by an application may be in response to inputsreceived from the user via movement of the user's eyes or inputsreceived from the input/output interface 140. Examples of theapplications may include gaming applications, conferencing applications,video playback application, or other suitable applications.

Headset tracking module 114 may track movements of near-eye display 120using slow calibration information from external imaging device 150. Forexample, headset tracking module 114 may determine positions of areference point of near-eye display 120 using observed locators from theslow calibration information and a model of near-eye display 120.Headset tracking module 114 may also determine positions of a referencepoint of near-eye display 120 using position information from the fastcalibration information. Additionally, in some embodiments, headsettracking module 114 may use portions of the fast calibrationinformation, the slow calibration information, or some combinationthereof, to predict a future location of near-eye display 120. Headsettracking module 114 may provide the estimated or predicted futureposition of near-eye display 120 to VR engine 116.

Headset tracking module 114 may calibrate the artificial reality systemenvironment 100 using one or more calibration parameters, and may adjustone or more calibration parameters to reduce errors in determining theposition of near-eye display 120. For example, headset tracking module114 may adjust the focus of external imaging device 150 to obtain a moreaccurate position for observed locators on near-eye display 120.Moreover, calibration performed by headset tracking module 114 may alsoaccount for information received from IMU 132. Additionally, if trackingof near-eye display 120 is lost (e.g., external imaging device 150 losesline of sight of at least a threshold number of locators 126), headsettracking module 114 may re-calibrate some or all of the calibrationparameters.

VR engine 116 may execute applications within artificial reality systemenvironment 100 and receive position information of near-eye display120, acceleration information of near-eye display 120, velocityinformation of near-eye display 120, predicted future positions ofnear-eye display 120, or some combination thereof from headset trackingmodule 114. VR engine 116 may also receive estimated eye position andorientation information from eye-tracking module 118. Based on thereceived information, VR engine 116 may determine content to provide tonear-eye display 120 for presentation to the user. For example, if thereceived information indicates that the user has looked to the left, VRengine 116 may generate content for near-eye display 120 that mirrorsthe user's eye movement in a virtual environment. Additionally, VRengine 116 may perform an action within an application executing onconsole 110 in response to an action request received from input/outputinterface 140, and provide feedback to the user indicating that theaction has been performed. The feedback may be visual or audiblefeedback via near-eye display 120 or haptic feedback via input/outputinterface 140.

Eye-tracking module 118 may receive eye-tracking data from eye-trackingunit 130 and determine the position of the user's eye based on the eyetracking data. The position of the eye may include an eye's orientation,location, or both relative to near-eye display 120 or any elementthereof. Because the eye's axes of rotation change as a function of theeye's location in its socket, determining the eye's location in itssocket may allow eye-tracking module 118 to more accurately determinethe eye's orientation.

In some embodiments, eye-tracking unit 130 may output eye-tracking dataincluding images of the eye, and eye-tracking module 118 may determinethe eye's position based on the images. For example, eye-tracking module118 may store a mapping between images captured by eye-tracking unit 130and eye positions to determine a reference eye position from an imagecaptured by eye-tracking unit 130. Alternatively or additionally,eye-tracking module 118 may determine an updated eye position relativeto a reference eye position by comparing an image from which thereference eye position is determined to an image from which the updatedeye position is to be determined. Eye-tracking module 118 may determineeye position using measurements from different imaging devices or othersensors. For example, as described above, eye-tracking module 118 mayuse measurements from a slow eye-tracking system to determine areference eye position, and then determine updated positions relative tothe reference eye position from a fast eye-tracking system until a nextreference eye position is determined based on measurements from the sloweye-tracking system.

Eye-tracking module 118 may also determine eye calibration parameters toimprove precision and accuracy of eye tracking. Eye calibrationparameters may include parameters that may change whenever a user donsor adjusts near-eye display 120. Example eye calibration parameters mayinclude an estimated distance between a component of eye-tracking unit130 and one or more parts of the eye, such as the eye's center, pupil,cornea boundary, or a point on the surface of the eye. Other example eyecalibration parameters may be specific to a particular user and mayinclude an estimated average eye radius, an average corneal radius, anaverage sclera radius, a map of features on the eye surface, and anestimated eye surface contour. In embodiments where light from theoutside of near-eye display 120 may reach the eye (as in some augmentedreality applications), the calibration parameters may include correctionfactors for intensity and color balance due to variations in light fromthe outside of near-eye display 120. Eye-tracking module 118 may use eyecalibration parameters to determine whether the measurements captured byeye-tracking unit 130 would allow eye-tracking module 118 to determinean accurate eye position (also referred to herein as “validmeasurements”). Invalid measurements, from which eye-tracking module 118may not be able to determine an accurate eye position, may be caused bythe user blinking, adjusting the headset, or removing the headset,and/or may be caused by near-eye display 120 experiencing greater than athreshold change in illumination due to external light.

FIG. 2 is a perspective view of a simplified example near-eye display200 including various sensors. Near-eye display 200 may be a specificimplementation of near-eye display 120 of FIG. 1, and may be configuredto operate as a virtual reality display, an augmented reality display,and/or a mixed reality display. Near-eye display 200 may include a frame205 and a display 210. Display 210 may be configured to present contentto a user. In some embodiments, display 210 may include displayelectronics and/or display optics. For example, as described above withrespect to near-eye display 120 of FIG. 1, display 210 may include anLCD display panel, an LED display panel, or an optical display panel(e.g., a waveguide display assembly).

Near-eye display 200 may further include various sensors 250 a, 250 b,250 c, 250 d, and 250 e on or within frame 205. In some embodiments,sensors 250 a-250 e may include one or more depth sensors, motionsensors, position sensors, inertial sensors, or ambient light sensors.In some embodiments, sensors 250 a-250 e may include one or more imagesensors configured to generate image data representing different fieldsof views in different directions. In some embodiments, sensors 250 a-250e may be used as input devices to control or influence the displayedcontent of near-eye display 200, and/or to provide an interactiveVR/AR/MR experience to a user of near-eye display 200. In someembodiments, sensors 250 a-250 e may also be used for stereoscopicimaging.

In some embodiments, near-eye display 200 may further include one ormore illuminators 230 to project light into the physical environment.The projected light may be associated with different frequency bands(e.g., visible light, infra-red light, ultra-violet light, etc.), andmay serve various purposes. For example, illuminator(s) 230 may projectlight in a dark environment (or in an environment with low intensity ofinfra-red light, ultra-violet light, etc.) to assist sensors 250 a-250 ein capturing images of different objects within the dark environment. Insome embodiments, illuminator(s) 230 may be used to project certainlight pattern onto the objects within the environment. In someembodiments, illuminator(s) 230 may be used as locators, such aslocators 126 described above with respect to FIG. 1. In someembodiments, illuminator(s) 230 may be a two-dimensional IR array thatcan illuminate the surrounding environment, such as for hand trackingand/or depth sensing.

In some embodiments, near-eye display 200 may also include ahigh-resolution camera 240. Camera 240 may capture images of thephysical environment in the field of view. The captured images may beprocessed, for example, by a virtual reality engine (e.g., virtualreality engine 116 of FIG. 1) to add virtual objects to the capturedimages or modify physical objects in the captured images, and theprocessed images may be displayed to the user by display 210 for AR orMR applications.

Embodiments of the invention may include or be implemented inconjunction with an artificial reality system. Artificial reality is aform of reality that has been adjusted in some manner beforepresentation to a user, which may include, e.g., a virtual reality (VR),an augmented reality (AR), a mixed reality (MR), a hybrid reality, orsome combination and/or derivatives thereof. Artificial reality contentmay include completely generated content or generated content combinedwith captured (e.g., real-world) content. The artificial reality contentmay include video, audio, haptic feedback, or some combination thereof,and any of which may be presented in a single channel or in multiplechannels (such as stereo video that produces a three-dimensional effectto the viewer). Additionally, in some embodiments, artificial realitymay also be associated with applications, products, accessories,services, or some combination thereof, that are used to, e.g., createcontent in an artificial reality and/or are otherwise used in (e.g.,perform activities in) an artificial reality. The artificial realitysystem that provides the artificial reality content may be implementedon various platforms, including a head-mounted display (HMD) connectedto a host computer system, a standalone HMD, a mobile device orcomputing system, or any other hardware platform capable of providingartificial reality content to one or more viewers.

FIG. 3 is a perspective view of an example near-eye display in the formof a head-mounted display (HMD) device 300 for implementing some of theexample near-eye displays (e.g., near-eye display 120) disclosed herein.HMD device 300 may be a part of, e.g., a virtual reality (VR) system, anaugmented reality (AR) system, a mixed reality (MR) system, or somecombinations thereof HMD device 300 may include a body 320 and a headstrap 330. FIG. 3 shows a top side 323, a front side 325, and a rightside 327 of body 320 in the perspective view. Head strap 330 may have anadjustable or extendible length. There may be a sufficient space betweenbody 320 and head strap 330 of HMD device 300 for allowing a user tomount HMD device 300 onto the user's head. In various embodiments, HMDdevice 300 may include additional, fewer, or different components. Forexample, in some embodiments, HMD device 300 may include eyeglasstemples and temples tips, rather than head strap 330.

HMD device 300 may present to a user media including virtual and/oraugmented views of a physical, real-world environment withcomputer-generated elements. Examples of the media presented by HMDdevice 300 may include images (e.g., two-dimensional (2D) orthree-dimensional (3D) images), videos (e.g., 2D or 3D videos), audios,or some combinations thereof. The images and videos may be presented toeach eye of the user by one or more display assemblies (not shown inFIG. 3) enclosed in body 320 of HMD device 300. In various embodiments,the one or more display assemblies may include a single electronicdisplay panel or multiple electronic display panels (e.g., one displaypanel for each eye of the user). Examples of the electronic displaypanel(s) may include, for example, a liquid crystal display (LCD), anorganic light emitting diode (OLED) display, an inorganic light emittingdiode (ILED) display, a micro-LED display, an active-matrix organiclight emitting diode (AMOLED) display, a transparent organic lightemitting diode (TOLED) display, some other display, or some combinationsthereof. HMD device 300 may include two eye box regions.

In some implementations, HMD device 300 may include various sensors (notshown), such as depth sensors, motion sensors, position sensors, and eyetracking sensors. Some of these sensors may use a structured lightpattern for sensing. In some implementations, HMD device 300 may includean input/output interface for communicating with a console. In someimplementations, HMD device 300 may include a virtual reality engine(not shown) that can execute applications within HMD device 300 andreceive depth information, position information, accelerationinformation, velocity information, predicted future positions, or somecombination thereof of HMD device 300 from the various sensors. In someimplementations, the information received by the virtual reality enginemay be used for producing a signal (e.g., display instructions) to theone or more display assemblies. In some implementations, HMD device 300may include locators (not shown, such as locators 126) located in fixedpositions on body 320 relative to one another and relative to areference point. Each of the locators may emit light that is detectableby an external imaging device.

FIG. 4 is a simplified block diagram of an example electronic system 400of an example near-eye display (e.g., HMD device) for implementing someof the examples disclosed herein. Electronic system 400 may be used asthe electronic system of HMD device 1000 or other near-eye displaysdescribed above. In this example, electronic system 400 may include oneor more processor(s) 410 and a memory 420. Processor(s) 410 may beconfigured to execute instructions for performing operations at a numberof components, and can be, for example, a general-purpose processor ormicroprocessor suitable for implementation within a portable electronicdevice. Processor(s) 410 may be communicatively coupled with a pluralityof components within electronic system 400. To realize thiscommunicative coupling, processor(s) 410 may communicate with the otherillustrated components across a bus 440. Bus 440 may be any subsystemadapted to transfer data within electronic system 400. Bus 440 mayinclude a plurality of computer buses and additional circuitry totransfer data.

Memory 420 may be coupled to processor(s) 410. In some embodiments,memory 420 may offer both short-term and long-term storage and may bedivided into several units. Memory 420 may be volatile, such as staticrandom access memory (SRAM) and/or dynamic random access memory (DRAM)and/or non-volatile, such as read-only memory (ROM), flash memory, andthe like. Furthermore, memory 420 may include removable storage devices,such as secure digital (SD) cards. Memory 420 may provide storage ofcomputer-readable instructions, data structures, program modules, andother data for electronic system 400. In some embodiments, memory 420may be distributed into different hardware modules. A set ofinstructions and/or code might be stored on memory 420. The instructionsmight take the form of executable code that may be executable byelectronic system 400, and/or might take the form of source and/orinstallable code, which, upon compilation and/or installation onelectronic system 400 (e.g., using any of a variety of generallyavailable compilers, installation programs, compression/decompressionutilities, etc.), may take the form of executable code.

In some embodiments, memory 420 may store a plurality of applicationmodules 422 through 424, which may include any number of applications.Examples of applications may include gaming applications, conferencingapplications, video playback applications, or other suitableapplications. The applications may include a depth sensing function oreye tracking function. Application modules 422-424 may includeparticular instructions to be executed by processor(s) 410. In someembodiments, certain applications or parts of application modules422-424 may be executable by other hardware modules 480. In certainembodiments, memory 420 may additionally include secure memory, whichmay include additional security controls to prevent copying or otherunauthorized access to secure information.

In some embodiments, memory 420 may include an operating system 425loaded therein. Operating system 425 may be operable to initiate theexecution of the instructions provided by application modules 422-424and/or manage other hardware modules 480 as well as interfaces with awireless communication subsystem 430 which may include one or morewireless transceivers. Operating system 425 may be adapted to performother operations across the components of electronic system 400including threading, resource management, data storage control and othersimilar functionality.

Wireless communication subsystem 430 may include, for example, aninfrared communication device, a wireless communication device and/orchipset (such as a Bluetooth® device, an IEEE 802.11 device, a Wi-Fidevice, a WiMax device, cellular communication facilities, etc.), and/orsimilar communication interfaces. Electronic system 400 may include oneor more antennas 434 for wireless communication as part of wirelesscommunication subsystem 430 or as a separate component coupled to anyportion of the system. Depending on desired functionality, wirelesscommunication subsystem 430 may include separate transceivers tocommunicate with base transceiver stations and other wireless devicesand access points, which may include communicating with different datanetworks and/or network types, such as wireless wide-area networks(WWANs), wireless local area networks (WLANs), or wireless personal areanetworks (WPANs). A WWAN may be, for example, a WiMax (IEEE 802.16)network. A WLAN may be, for example, an IEEE 802.11x network. A WPAN maybe, for example, a Bluetooth network, an IEEE 802.15x, or some othertypes of network. The techniques described herein may also be used forany combination of WWAN, WLAN, and/or WPAN. Wireless communicationssubsystem 430 may permit data to be exchanged with a network, othercomputer systems, and/or any other devices described herein. Wirelesscommunication subsystem 430 may include a means for transmitting orreceiving data, such as identifiers of HMD devices, position data, ageographic map, a heat map, photos, or videos, using antenna(s) 434 andwireless link(s) 432. Wireless communication subsystem 430, processor(s)410, and memory 420 may together comprise at least a part of one or moreof a means for performing some functions disclosed herein.

Embodiments of electronic system 400 may also include one or moresensors 490. Sensor(s) 490 may include, for example, an image sensor, anaccelerometer, a pressure sensor, a temperature sensor, a proximitysensor, a magnetometer, a gyroscope, an inertial sensor (e.g., a modulethat combines an accelerometer and a gyroscope), an ambient lightsensor, or any other similar module operable to provide sensory outputand/or receive sensory input, such as a depth sensor or a positionsensor. For example, in some implementations, sensor(s) 490 may includeone or more inertial measurement units (IMUs) and/or one or moreposition sensors. An IMU may generate calibration data indicating anestimated position of the HMD device relative to an initial position ofthe HMD device, based on measurement signals received from one or moreof the position sensors. A position sensor may generate one or moremeasurement signals in response to motion of the HMD device. Examples ofthe position sensors may include, but are not limited to, one or moreaccelerometers, one or more gyroscopes, one or more magnetometers,another suitable type of sensor that detects motion, a type of sensorused for error correction of the IMU, or some combination thereof. Theposition sensors may be located external to the IMU, internal to theIMU, or some combination thereof. At least some sensors may use astructured light pattern for sensing.

Electronic system 400 may include a display module 460. Display module460 may be a near-eye display, and may graphically present information,such as images, videos, and various instructions, from electronic system400 to a user. Such information may be derived from one or moreapplication modules 422-424, virtual reality engine 426, one or moreother hardware modules 480, a combination thereof, or any other suitablemeans for resolving graphical content for the user (e.g., by operatingsystem 425). Display module 460 may use liquid crystal display (LCD)technology, light-emitting diode (LED) technology (including, forexample, OLED, ILED, mLED, AMOLED, TOLED, etc.), light emitting polymerdisplay (LPD) technology, or some other display technology.

Electronic system 400 may include a user input/output module 470. Userinput/output module 470 may allow a user to send action requests toelectronic system 400. An action request may be a request to perform aparticular action. For example, an action request may be to start or endan application or to perform a particular action within the application.User input/output module 470 may include one or more input devices.Example input devices may include a touchscreen, a touch pad,microphone(s), button(s), dial(s), switch(es), a keyboard, a mouse, agame controller, or any other suitable device for receiving actionrequests and communicating the received action requests to electronicsystem 400. In some embodiments, user input/output module 470 mayprovide haptic feedback to the user in accordance with instructionsreceived from electronic system 400. For example, the haptic feedbackmay be provided when an action request is received or has beenperformed.

Electronic system 400 may include a camera 450 that may be used to takephotos or videos of a user, for example, for tracking the user's eyeposition. Camera 450 may also be used to take photos or videos of theenvironment, for example, for VR, AR, or MR applications. Camera 450 mayinclude, for example, a complementary metal-oxide-semiconductor (CMOS)image sensor with a few millions or tens of millions of pixels. In someimplementations, camera 450 may include two or more cameras that may beused to capture 3-D images.

In some embodiments, electronic system 400 may include a plurality ofother hardware modules 480. Each of other hardware modules 480 may be aphysical module within electronic system 400. While each of otherhardware modules 480 may be permanently configured as a structure, someof other hardware modules 480 may be temporarily configured to performspecific functions or temporarily activated. Examples of other hardwaremodules 480 may include, for example, an audio output and/or inputmodule (e.g., a microphone or speaker), a near field communication (NFC)module, a rechargeable battery, a battery management system, awired/wireless battery charging system, etc. In some embodiments, one ormore functions of other hardware modules 480 may be implemented insoftware.

In some embodiments, memory 420 of electronic system 400 may also storea virtual reality engine 426. Virtual reality engine 426 may executeapplications within electronic system 400 and receive positioninformation, acceleration information, velocity information, predictedfuture positions, or some combination thereof of the HMD device from thevarious sensors. In some embodiments, the information received byvirtual reality engine 426 may be used for producing a signal (e.g.,display instructions) to display module 460. For example, if thereceived information indicates that the user has looked to the left,virtual reality engine 426 may generate content for the HMD device thatmirrors the user's movement in a virtual environment. Additionally,virtual reality engine 426 may perform an action within an applicationin response to an action request received from user input/output module470 and provide feedback to the user. The provided feedback may bevisual, audible, or haptic feedback. In some implementations,processor(s) 410 may include one or more GPUs that may execute virtualreality engine 426.

In various implementations, the above-described hardware and modules maybe implemented on a single device or on multiple devices that cancommunicate with one another using wired or wireless connections. Forexample, in some implementations, some components or modules, such asGPUs, virtual reality engine 426, and applications (e.g., trackingapplication), may be implemented on a console separate from thehead-mounted display device. In some implementations, one console may beconnected to or support more than one HMD.

In alternative configurations, different and/or additional componentsmay be included in electronic system 400. Similarly, functionality ofone or more of the components can be distributed among the components ina manner different from the manner described above. For example, in someembodiments, electronic system 400 may be modified to include othersystem environments, such as an AR system environment and/or an MRenvironment.

As discussed above, LEDs may be used as light sources in various partsof an artificial reality system, such as the display electronics 122,the locators 126, and the eye tracking unit 130. Further, LEDs may beused in various display technologies, such as heads-up displays,television displays, smartphone displays, watch displays, wearabledisplays, and flexible displays. LEDs can be used in combination with aplurality of sensors in many applications such as the Internet of Things(IOT). The LEDs described herein can be configured to emit light havingany desired wavelength, such as ultraviolet, visible, or infrared light.Also, the LEDs described herein can be configured to have any suitablemesa shape, such as planar, vertical, conical, semi-parabolic,parabolic, or combinations thereof. The LEDs described herein may bemicro-LEDs that have an active light emitting area with a lineardimension that is less than 50 μm, less than 20 μm, or less than 10 μm.For example, the linear dimension may be as small as 2 μm or 4 μm.

Exemplary embodiments of the invention include methods of reducingsurface recombination losses in micro-LEDs. For example, surfacerecombination may be reduced by passivating the surface of asemiconductor layer of a micro-LED. Alternatively or in addition,surface recombination may be reduced by decreasing lateral carriermobility. For example, lateral carrier mobility may be decreased byusing ion implantation to disrupt the semiconductor lattice outside of acentral portion of the micro-LED. Alternatively or in addition, lateralcarrier mobility may be decreased by using quantum well intermixing tochange the composition of areas of the semiconductor layer outside ofthe central portion of the micro-LED.

FIGS. 5A, 5B, 6A, and 6B illustrate a method of reducing surfacerecombination by passivating the surface of a semiconductor layer of amicro-LED. FIG. 5A shows a micro-LED 500 that undergoes dry etching 540.The micro-LED 500 includes an n-side semiconductor layer 510, a p-sidesemiconductor layer 515, and an active light emitting layer 520.Together the n-side semiconductor layer 510, the p-side semiconductorlayer 515, and the active light emitting layer 520 form a semiconductorlayer 590. The semiconductor layer 590 may include any suitablematerial, such as a group III phosphide or a group III arsenide. Thesemiconductor layer 590 may have a mesa shape, and the mesa shape may beplanar, vertical, conical, semi-parabolic, and/or parabolic. The n-sidesemiconductor layer 510 may be formed on a substrate 525, and may have alight outcoupling surface 530. In the example shown in FIG. 5A, thesemiconductor layer 590 has a parabolic mesa shape, and the diameter ofthe light outcoupling surface 530 is less than 10 μm.

As shown in FIG. 5A, the surface of the semiconductor layer 590 of themicro-LED 500 is damaged by the dry etching 540. The dry etching 540causes surface defects, such as dangling bonds, that increase the numberof electronic states that capture electrons, causing the electrons torecombine and be lost at the surface. As discussed above, this problemis especially severe for micro-LEDs, because their small size causes thevast majority of electrons to diffuse to the surface of thesemiconductor layer 590, where they are lost. This problem is mostpronounced in red micro-LEDs, because the diffusion length in the groupIII phosphide materials that are typically used in red micro-LEDs is onthe order of microns. In contrast, the diffusion length in the group IIInitride materials that are typically used in green and blue micro-LEDsis on the order of hundreds of nanometers.

As shown in FIG. 5B, wet etching and/or cleaning 550 may be applied tothe surface of the semiconductor layer 590 to form micro-LED 505. Thewet etching and/or cleaning 550 may remove an oxide layer and/orresidual atoms that are left after the dry etching 540. Variousmaterials may be used, such as an acid or a base. For example,hydrochloric acid, ammonium hydroxide, and/or a piranha solution may beused.

As shown in FIG. 6A, a chemical treatment 660 may be performed to removeremaining materials from the surface of the semiconductor layer 590 toform micro-LED 600, and smooth out the surface of the semiconductorlayer 590. For example, the chemical treatment 660 may apply ammoniumsulfide to the surface of the semiconductor layer 590 under ambientconditions, or may use molecular beam epitaxy (MBE) to apply ZnSe invacuum or in an atmosphere having a pressure less than 10 mbar. Thechemical may be applied by any suitable method, such as MBE, metalorganic chemical vapor deposition (MOCVD), or metal organic vapor phaseepitaxy (MOVPE).

As shown in FIG. 6B, a passivation layer 670 may subsequently bedeposited on the surface of the semiconductor layer 590 to formmicro-LED 605. The dielectric material may be deposited by varioustechniques, such as atomic layer deposition (ALD), inductively coupledplasma (ICP), plasma-enhanced chemical vapor deposition (PECVD), orinductively coupled plasma chemical vapor deposition (ICP CVD). Thedielectric material may be deposited in vacuum or in an atmospherehaving a pressure less than 10 mbar. Alternatively, the dielectricmaterial may be deposited by sputtering or evaporation. The dielectricmaterial may include oxides and/or nitrides. For example, the dielectricmaterial may include SiN_(x), SiO_(x), HfO_(x), AlN_(x), and/or AlO_(x).As more specific examples, the dielectric material may include SiN,SiO₂, HfO₂, AlN, and/or Al₂O₃. The dielectric material may becrystalline or amorphous.

The passivation layer 670 may terminate open chemical bonds on thesurface of the semiconductor layer 590, thereby reducing the density ofinterface states, which may be recombination active. The passivationlayer 670 may also act as a protective layer and/or enhance thereflective properties of the micro-LED 605. The passivation layer 670may reduce the surface recombination of the micro-LED 605. For example,the surface recombination velocity (SRV) may be reduced to less than10,000 cm/sec. Furthermore, the passivation layer 670 may modify thesurface of the semiconductor layer 590 by inducing a charge, bending theband structure, and/or creating an inversion layer, e.g. by internalcharge or polarization, so that minority carriers are repelled from theinterface and prevented from recombining.

The passivation layer 670 may be formed on the entire outer surface ofthe semiconductor layer 590, including the outer surface of the activelight emitting layer 520. A gap may be left in the passivation layer 670at the top of the semiconductor layer 590 for a p-contact to be formed.Forming the passivation layer 670 on the outer surface of the activelight emitting layer 520 is advantageous for reducing the surfacerecombination, because the active light emitting layer 520 is where theelectrons and holes combine to emit radiation.

The light outcoupling surface 530 of the semiconductor layer 590 mayhave a diameter that is less than twice the electron diffusion length ofthe material of the semiconductor layer 590. The electron diffusionlength L may be defined as L=√{square root over (D*τ)}, where D is thediffusivity of the material of the semiconductor layer 590, and τ is thelifetime of an electron within the semiconductor layer 590. The electrondiffusion length L is typically between 3 and 5 μm for group IIIphosphides and approximately 100 nm for group III nitrides. Thetechniques described herein may advantageously be applied when thediameter of the light outcoupling surface 530 of the semiconductor layer590 is less than twice the electron diffusion length L of the materialof the semiconductor layer 590, because this is when a significantnumber of electrons are lost at the surface of the semiconductor layer590. The electron diffusion length L may vary based on whether it ismeasured in the p-side semiconductor layer 515, the n-side semiconductorlayer 510, or the active layer 520. The electron diffusion length L mayalso vary based on the crystallographic structure of the semiconductorlayer 590.

FIG. 7 shows an array of micro-LEDs 700 that have been passivatedaccording to the methods described above. The array of micro-LEDs 700includes a semiconductor layer having an active light emitting layer 720that is arranged between a p-side semiconductor layer 715 and an n-sidesemiconductor layer 710. The n-side semiconductor layer 710 includes alight outcoupling surface 730 having a diameter that is less than twicethe electron diffusion length L of the material of the semiconductorlayer for each mesa. A passivation layer 770 is formed on the surface ofthe semiconductor layer, and covers the active light emitting layer 720.The methods described above are advantageous for micro-LED structures inwhich the active light emitting layer 720 is exposed to the outside,such that the passivation layer 770 covers the exposed portion of theactive light emitting layer 720.

FIG. 8 illustrates a method of reducing lateral carrier mobility andsurface recombination by using ion implantation to disrupt thesemiconductor lattice outside of a central portion of the micro-LED. Theion implantation reduces the number of electrons that reach the outersurface of the micro-LED, and therefore reduces the amount of surfacerecombination. Bombarding the semiconductor material with high-energyions has two effects. First, the lattice of the semiconductor materialbecomes less electrically conductive, so the current does not spreadthrough the entire structure in all directions, and instead is funneledvertically through the central region. Second, the diffusivity isreduced in the bombarded region, such that the electrons do not move asfar laterally. Both the diffusivity D and the electron diffusion lengthL are reduced by the ion implantation.

FIG. 8 shows a micro-LED 500 that undergoes ion implantation 880 beforea mesa structure is formed from the semiconductor layer. As shown inFIG. 8, the micro-LED 800 includes an n-side semiconductor layer 810, ap-side semiconductor layer 815, and an active light emitting layer 820.Together the n-side semiconductor layer 810, the p-side semiconductorlayer 815, and the active light emitting layer 820 form a semiconductorlayer 890. The semiconductor layer 890 may include any suitablematerial, such as a group III phosphide or a group III arsenide. Then-side semiconductor layer 810 may be formed on a substrate 825, and mayhave a light outcoupling surface 830. The diameter of the lightoutcoupling surface 530 may be less than 10 μm. A p contact 840 may beformed on a top surface of the p-side semiconductor layer 815, and aresist 850 may be formed on a top surface of the p contact 840. The pcontact 840 may be made of a metal, such as titanium or gold.

The p contact and the resist 850 may be used as a mask to define anouter region of the semiconductor layer 890 where the ions areimplanted. The outer region will include the portions of thesemiconductor layer that are not shaded by the mask during ionimplantation. If the ions are incident at an angle of 0° with respect toan axis that is normal to a plane of the mask (i.e. the plane of themask is along the horizontal direction in FIG. 8), the outer region willinclude the portions of the semiconductor layer 890 that are notdirectly beneath the mask. On the other hand, if the ions are incidentat an angle that is greater than 0° with respect to the axis that isnormal to a plane of the mask, the outer region will include theportions of the semiconductor layer that are not shaded by the mask,thereby forming an outer region having interior edges that are sloped atthe angle of implantation. For example, the ions may be implanted at anangle between 0° and 7° with respect to the axis that is normal to theplane of the mask.

As shown in FIG. 8, ion implantation 880 may be performed before thesemiconductor layer 890 is formed into a mesa shape. The mesa shape maybe planar, vertical, conical, semi-parabolic, and/or parabolic.Alternatively, ion implantation may be performed after the semiconductorlayer 890 is formed into the mesa shape. In this example, the energy ofthe ions would be reduced.

Various ions may be used, such as H or He ions. The implantation patternmay be controlled by adjusting the implantation angle, the ion energy,the types of ions, and/or the masking of the implantation region. Forexample, the depth to which the ions are implanted may be varied bychanging the energy of the ions. H and He ions may be implanted with anenergy between 20 keV and 140 keV. For example, for red micro-LEDs, a 20keV implantation energy may result in an implantation depth of 200 nm,an 80 keV implantation energy may result in an implantation depth of 600nm, and a 140 keV implantation energy may result in an implantationdepth of 1000 nm. The implantation energy for thinner p-side micro-LEDs,such as blue and green GaN-based micro-LEDs, may range from 5 keV to 120keV. On the other hand, the implantation energy for thicker p-sidemicro-LEDs, such as infrared (IR) micro-LEDs, may range from 80 keV to400 keV. The implantation dose of the ions may be between 1×10¹⁴ cm⁻²and 1×10¹⁶ cm⁻². The lateral carrier diffusion in the outer region ofthe semiconductor layer 890 may be reduced to less than 1 cm²/s byperforming ion implantation.

FIGS. 9A and 9B show various ion implantation depths for micro-LEDs.FIG. 10 shows additional details of the micro-LED shown in FIG. 9A. FIG.9A shows an infrared micro-LED 900 that emits light at 940 nm, and FIG.9B shows a red micro-LED 905 that emits light at 630 nm. In the examplesshown in FIGS. 9A and 9B, the first implantation depth 990 is 200 nm,the second implantation depth 992 is 600 nm, and the third implantationdepth 994 is 1000 nm.

As shown in FIGS. 9A and 10, the semiconductor layer of the micro-LED900 includes a p-side semiconductor layer 915 that has a 50 nm thickGaAs layer, a 50 nm thick Al_(0.09)Ga_(0.91)As layer, and a 500 nm thickAl_(0.3)Ga_(0.7)As layer. The semiconductor layer of the micro-LED 900also includes a 300 nm thick InGaAs/GaAsP multiple quantum well (MQW)layer 920 that is an active light emitting layer, and an n-sidesemiconductor layer 910 that has a 500 nm thick Al_(0.17)Ga_(0.83)Aslayer. The semiconductor layer is formed on a GaAs substrate 925. Thefirst implantation depth 990 extends from the top of the p-sidesemiconductor layer 915 through a depth within the 500 nm thickAl_(0.3)Ga_(0.7)As layer. The second implantation depth 992 extends fromthe top of the p-side semiconductor layer 915 through the interfacebetween the p-side semiconductor layer 915 and the active light emittinglayer 920. The third implantation depth 994 extends from the top of thep-side semiconductor layer 915 through a depth within the n-sidesemiconductor layer 910. The micro-LED 900 includes a p contact 940 anda resist 950 that are used as a mask during ion implantation 980.

As shown in FIG. 9B, the semiconductor layer of the micro-LED 905includes a p-side semiconductor layer that has a 200 nm thick GaP layer,a 90 nm thick In_(0.49)Al_(0.51)P layer, and a 10 nm thickIn_(0.5)Al_(0.25)Ga_(0.25)P layer. The semiconductor layer of themicro-LED 905 also includes a 180 nm thick InGaP/InAlGaP MQW layer thatis an active light emitting layer, and an n-side semiconductor layerthat has a 4500 nm thick Al_(0.6)Ga_(0.4)As layer. The semiconductorlayer is formed on a GaAs substrate. The first implantation depth 990extends from the top of the p-side semiconductor layer to the interfacebetween the p-side semiconductor layer and the active light emittinglayer. The second implantation depth 992 and the third implantationdepth 994 extend from the top of the p-side semiconductor layer throughdifferent depths within the n-side semiconductor layer.

As shown in FIGS. 9A and 9B, the ions may be implanted to various depthswithin the micro-LED. For example, the ions may be implanted from a topsurface of the p-side semiconductor layer to a depth within the p-sidesemiconductor layer. Alternatively, the ions may be implanted from a topsurface of the p-side semiconductor layer to a depth within the activelight emitting layer. As another option, the ions may be implanted froma top surface of the p-side semiconductor layer to a depth within then-side semiconductor layer.

FIGS. 11A and 11B show simulations of various ion distributions for theexample micro-LED 905 shown in FIG. 9B. FIG. 11A shows an iondistribution 1100 for hydrogen ions that were implanted with an energyof 140 keV and at an angle of 7° with respect to the axis that is normalto the plane of the mask, and FIG. 11B shows an ion distribution 1105for hydrogen ions that were implanted with an energy of 140 keV and atan angle of 0° with respect to the axis that is normal to the plane ofthe mask. FIG. 11A shows that the 7° implantation angle results in adisplacement of 120 nm.

FIGS. 12A-12C show simulations of additional ion distributions for theexample micro-LED 905 shown in FIG. 9B. FIG. 12A shows an iondistribution 1200 for hydrogen ions that were implanted with an energyof 20 keV and at an angle of 0° with respect to the axis that is normalto the plane of the mask, FIG. 12B shows an ion distribution 1205 forhydrogen ions that were implanted with an energy of 80 keV and at anangle of 0° with respect to the axis that is normal to the plane of themask, and FIG. 12C shows an ion distribution 1210 for hydrogen ions thatwere implanted with an energy of 140 keV and at an angle of 0° withrespect to the axis that is normal to the plane of the mask. FIGS.12A-12C show that there is only a small increase in the ion distributionfrom 60 nm to 108 nm as the implantation energy and the implantationdepth increase.

FIGS. 13A and 13B show tables of results of ion implantation for theexample micro-LED 905 shown in FIG. 9B. The tables indicate examples ofvarious parameters for three ion implantation depths (200 nm, 600 nm,and 1000 nm). The parameters include the ion implantation energy (EnergyH or Energy E), the projected range (Rp), the depths straggle, theradial, and the radial straggle. The ion implantation energy is theenergy at which ions are accelerated toward the sample, in units of keV.The projected range (Rp) is the depth to which the maximum number ofions travel in the sample (or in other words, the highest concentrationof ions is at the projected range), in units of nm. This is in the samedirection as the direction of implantation. The depths straggle, whichmay also be referred to as the projected straggle, is a measure of thedistribution of the ions and is one standard deviation of thatdistribution. This is in the same direction as the projected range (Rp).The radial is a measure of the spread of ions in a directionperpendicular to the implantation direction. The radial straggle, whichmay also be referred to as the lateral straggle, is the standarddeviation of the radial distribution, and is in the same direction asthe radial distribution.

FIG. 13A shows a table 1300 of results of ion implantation for hydrogenions, and FIG. 13B shows a table 1305 of results of ion implantation forhelium ions. As shown in FIGS. 13A and 13B, there is only a smallincrease in the vertical ion distribution from 60 nm to 160 nm as theimplantation energy and the implantation depth increase. However, thereis a stronger increase in the lateral ion distribution from 140 nm to600 nm as the implantation energy and the implantation depth increase.

The parameters shown in FIG. 13A are merely examples, and can have othervalues. For example, the ion implantation energy for an ion implantationdepth of 200 nm can range from 15 keV to 25 keV, the ion implantationenergy for an ion implantation depth of 600 nm can range from 60 keV to100 keV, and the ion implantation energy for an ion implantation depthof 1000 nm can range from 105 keV to 175 keV. Further, the projectedrange (Rp) for an ion implantation depth of 200 nm can range from 147 nmto 245 nm, the projected range (Rp) for an ion implantation depth of 600nm can range from 454 nm to 756 nm, and the projected range (Rp) for anion implantation depth of 1000 nm can range from 795 nm to 1,325 nm. Inaddition, the depths straggle for an ion implantation depth of 200 nmcan range from 48 nm to 80 nm, the depths straggle for an ionimplantation depth of 600 nm can range from 84 nm to 140 nm, and thedepths straggle for an ion implantation depth of 1000 nm can range from100 nm to 167 nm. Also, the radial for an ion implantation depth of 200nm can range from 105 nm to 175 nm, the radial for an ion implantationdepth of 600 nm can range from 225 nm to 437 nm, and the radial for anion implantation depth of 1000 nm can range from 450 nm to 750 nm.Further, the radial straggle for an ion implantation depth of 200 nm canrange from 45 nm to 75 nm, the radial straggle for an ion implantationdepth of 600 nm can range from 113 nm to 187 nm, and the radial stragglefor an ion implantation depth of 1000 nm can range from 300 nm to 500nm.

Similarly, the parameters shown in FIG. 13B are merely examples, and canhave other values. For example, the ion implantation energy for an ionimplantation depth of 200 nm can range from 22 keV to 37 keV, the ionimplantation energy for an ion implantation depth of 600 nm can rangefrom 90 keV to 150 keV, and the ion implantation energy for an ionimplantation depth of 1000 nm can range from 225 keV to 375 keV.Further, the projected range (Rp) for an ion implantation depth of 200nm can range from 148 nm to 247 nm, the projected range (Rp) for an ionimplantation depth of 600 nm can range from 438 nm to 731 nm, and theprojected range (Rp) for an ion implantation depth of 1000 nm can rangefrom 780 nm to 1,300 nm. In addition, the depths straggle for an ionimplantation depth of 200 nm can range from 61 nm to 101 nm, the depthsstraggle for an ion implantation depth of 600 nm can range from 105 nmto 175 nm, and the depths straggle for an ion implantation depth of 1000nm can range from 124 nm to 206 nm. Also, the radial for an ionimplantation depth of 200 nm can range from 120 nm to 200 nm, the radialfor an ion implantation depth of 600 nm can range from 262 nm to 437 nm,and the radial for an ion implantation depth of 1000 nm can range from375 nm to 625 nm. Further, the radial straggle for an ion implantationdepth of 200 nm can range from 45 nm to 75 nm, the radial straggle foran ion implantation depth of 600 nm can range from 90 nm to 150 nm, andthe radial straggle for an ion implantation depth of 1000 nm can rangefrom 187 nm to 312 nm.

FIGS. 14A-14H show simulations of the mask thicknesses that are neededto achieve different ion implantation depths. FIG. 14A shows a graph1400 of the mask thickness as a function of the implantation energy ofhydrogen ions for an Al mask, FIG. 14B shows a graph 1405 of the maskthickness as a function of the implantation energy of hydrogen ions foran AZ111 photoresist mask, FIG. 14C shows a graph 1410 of the maskthickness as a function of the implantation energy of hydrogen ions foran Si₃N₄ mask, FIG. 14D shows a graph 1415 of the mask thickness as afunction of the implantation energy of helium ions for a gold mask, FIG.14E shows a graph 1420 of the mask thickness as a function of theimplantation energy of helium ions for a nickel mask, FIG. 14F shows agraph 1425 of the mask thickness as a function of the implantationenergy of helium ions for an aluminum mask, FIG. 14G shows a graph 1430of the mask thickness as a function of the implantation energy of heliumions for an AZ111 photoresist mask, and FIG. 14H shows a graph 1435 ofthe mask thickness as a function of the implantation energy of heliumions for an Si₃N₄ mask. Based on the data shown in FIGS. 14A-14H, thethickness of the gold or nickel mask may be less than 500 nm, thethickness of the aluminum mask may be less than 1000 nm, the thicknessof the AZ111 photoresist mask may be less than 2500 nm, and thethickness of the Si₃N₄ hard mask may be less than 800 nm.

FIGS. 15A and 15B illustrate a method of reducing lateral carriermobility and surface recombination by using quantum well intermixing tochange the composition of areas of the semiconductor layer outside ofthe central portion of the micro-LED. The quantum well intermixingreduces the number of electrons that reach the outer surface of themicro-LED, and therefore reduces the amount of surface recombination.

FIG. 15A shows a band energy diagram 1500 for a semiconductor material,such as AlInGaP. The band energy diagram 1500 plots energy as a functionof position. FIG. 15B shows a corresponding micro-LED 1505 that includesan n-side semiconductor layer 1510, a p-side semiconductor layer 1515,and an active light emitting layer 1520. Together the n-sidesemiconductor layer 1510, the p-side semiconductor layer 1515, and theactive light emitting layer 1520 form a semiconductor layer 1590. Thesemiconductor layer 1590 may include any suitable material, such as agroup III phosphide or a group III arsenide. The semiconductor layer1590 may have a mesa shape, and the mesa shape may be planar, vertical,conical, semi-parabolic, and/or parabolic. The n-side semiconductorlayer 1510 may be formed on a substrate 1525, and may have a lightoutcoupling surface 1530. In the example shown in FIG. 15B, thesemiconductor layer 1590 has a parabolic mesa shape, and the diameter ofthe light outcoupling surface 1530 is less than 10 μm.

As shown in FIG. 15A, quantum well intermixing may be used to increasethe bandgap in an outer region of the semiconductor layer 1590 byimplanting ions in the outer region of the semiconductor layer 1590 andsubsequently annealing the outer region of the semiconductor layer 1590to intermix the ions with atoms within the outer region of thesemiconductor layer 1590. The ions may be implanted according to themethods discussed above with regard to FIG. 8. For quantum wellintermixing, various ions may be used, such as Al ions. The Al ions maybe implanted with an energy of approximately 400 keV, which may resultin an implantation depth of approximately 460 nm. More generally, the Alions may be implanted with an energy between 80 keV and 400 keV. Theimplantation depth may be within the active light emitting layer 1520.The outer region of the semiconductor layer 1590 is shown as intermixingregions 1550 in FIG. 15A.

For example, if the semiconductor layer 1590 is made of AlInGaP, extraAl may be added at the edges of the quantum wells in the intermixingregions 1550. As shown in FIG. 15A, this increases the bandgap at theedges of the quantum wells, such that the band structure is flat in thecenter, the conduction band bends upward at the edges, and/or thevalence band bends downward at the edges (not shown). Accordingly, whenelectrons are injected from the top of the p-side semiconductor layer1515, they can freely diffuse in the lateral direction, but are repelledby the higher band structure at the edges, which prevents them fromescaping from the side of the structure. For example, the concentrationof Al may be increased from 0.3 to 0.5 at the edges of the intermixingregions 1550. The intermixing regions 1550 may form a cross-sectionalannular shape.

FIGS. 16A-16C show simulations of various ion distributions for theexample micro-LED 1505 shown in FIG. 15B. FIG. 16A shows an iondistribution 1600 for Al ions that were implanted with an energy of 140keV and at an angle of 0° with respect to the axis that is normal to theplane of the mask, FIG. 16B shows an ion distribution 1605 for Al ionsthat were implanted with an energy of 400 keV and at an angle of 0° withrespect to the axis that is normal to the plane of the mask, and FIG.16C shows a two-dimensional plot 1610 corresponding to the iondistribution 1605 shown in FIG. 16B. FIGS. 16A-16C indicate thatimplantation depths of 460 nm may be achieved with implantation energiesof 400 keV.

The techniques discussed above may also be used to reduce surfacerecombination losses in LEDs having larger sizes, such as chips having alinear dimension of 25 μm or 50-60 μm. More generally, these larger LEDsmay have a linear dimension between 10 μm and 100 μm. For example,implanting hydrogen ions as discussed above may result in LEDs having ahigher light output power at a lower current. Accordingly, thetechniques discussed above may be used to reduce surface recombinationlosses in LEDs having various sizes between 0.1 μm and 100 μm.

By performing one or more of the methods discussed above, the surfacerecombination loss of a micro-LED may be reduced to less than 99%, 80%,60%, 30%, or 10%. The amount of reduction may be based on the color ofthe micro-LED and/or the material of the semiconductor layer. Forexample, the surface recombination loss of a red or IR micro-LED may bereduced to less than 60%-80%, and the surface recombination loss of ablue or green micro-LED may be reduced to less than 60%. Alternativelyor in addition, the brightness of a micro-LED may be increased byperforming one or more of the methods discussed above. For example, thebrightness of a red micro-LED may increase by a factor of 10 with 10×lower current.

Further, the surface recombination velocity may be reduced from 3×10⁴cm/s to 1-2×10⁴ cm/s for red micro-LEDs, and the lateral carrierdiffusion may be reduced from 20 cm²/s to 0.07 cm²/s for red micro-LEDs.The external quantum efficiency of red micro-LEDs may be increased by afactor of 6 with 10× lower current. The internal quantum efficiency ofred micro-LEDs may be up to 80%.

The methods, systems, and devices discussed above are examples. Variousembodiments may omit, substitute, or add various procedures orcomponents as appropriate. For instance, in alternative configurations,the methods described may be performed in an order different from thatdescribed, and/or various stages may be added, omitted, and/or combined.Also, features described with respect to certain embodiments may becombined in various other embodiments. Different aspects and elements ofthe embodiments may be combined in a similar manner. Also, technologyevolves and, thus, many of the elements are examples that do not limitthe scope of the disclosure to those specific examples.

Specific details are given in the description to provide a thoroughunderstanding of the embodiments. However, embodiments may be practicedwithout these specific details. For example, well-known circuits,processes, systems, structures, and techniques have been shown withoutunnecessary detail in order to avoid obscuring the embodiments. Thisdescription provides example embodiments only, and is not intended tolimit the scope, applicability, or configuration of the invention.Rather, the preceding description of the embodiments will provide thoseskilled in the art with an enabling description for implementing variousembodiments. Various changes may be made in the function and arrangementof elements without departing from the spirit and scope of the presentdisclosure.

Also, some embodiments were described as processes depicted as flowdiagrams or block diagrams. Although each may describe the operations asa sequential process, many of the operations may be performed inparallel or concurrently. In addition, the order of the operations maybe rearranged. A process may have additional steps not included in thefigure. Furthermore, embodiments of the methods may be implemented byhardware, software, firmware, middleware, microcode, hardwaredescription languages, or any combination thereof. When implemented insoftware, firmware, middleware, or microcode, the program code or codesegments to perform the associated tasks may be stored in acomputer-readable medium such as a storage medium. Processors mayperform the associated tasks.

It will be apparent to those skilled in the art that substantialvariations may be made in accordance with specific requirements. Forexample, customized or special-purpose hardware might also be used,and/or particular elements might be implemented in hardware, software(including portable software, such as applets, etc.), or both. Further,connection to other computing devices such as network input/outputdevices may be employed.

With reference to the appended figures, components that can includememory can include non-transitory machine-readable media. The term“machine-readable medium” and “computer-readable medium,” as usedherein, refer to any storage medium that participates in providing datathat causes a machine to operate in a specific fashion. In embodimentsprovided hereinabove, various machine-readable media might be involvedin providing instructions/code to processing units and/or otherdevice(s) for execution. Additionally or alternatively, themachine-readable media might be used to store and/or carry suchinstructions/code. In many implementations, a computer-readable mediumis a physical and/or tangible storage medium. Such a medium may takemany forms, including, but not limited to, non-volatile media, volatilemedia, and transmission media. Common forms of computer-readable mediainclude, for example, magnetic and/or optical media such as compact disk(CD) or digital versatile disk (DVD), punch cards, paper tape, any otherphysical medium with patterns of holes, a RAM, a programmable read-onlymemory (PROM), an erasable programmable read-only memory (EPROM), aFLASH-EPROM, any other memory chip or cartridge, a carrier wave asdescribed hereinafter, or any other medium from which a computer canread instructions and/or code. A computer program product may includecode and/or machine-executable instructions that may represent aprocedure, a function, a subprogram, a program, a routine, anapplication (App), a subroutine, a module, a software package, a class,or any combination of instructions, data structures, or programstatements.

Those of skill in the art will appreciate that information and signalsused to communicate the messages described herein may be representedusing any of a variety of different technologies and techniques. Forexample, data, instructions, commands, information, signals, bits,symbols, and chips that may be referenced throughout the abovedescription may be represented by voltages, currents, electromagneticwaves, magnetic fields or particles, optical fields or particles, or anycombination thereof.

Terms, “and” and “or” as used herein, may include a variety of meaningsthat are also expected to depend at least in part upon the context inwhich such terms are used. Typically, “or” if used to associate a list,such as A, B, or C, is intended to mean A, B, and C, here used in theinclusive sense, as well as A, B, or C, here used in the exclusivesense. In addition, the term “one or more” as used herein may be used todescribe any feature, structure, or characteristic in the singular ormay be used to describe some combination of features, structures, orcharacteristics. However, it should be noted that this is merely anillustrative example and claimed subject matter is not limited to thisexample. Furthermore, the term “at least one of” if used to associate alist, such as A, B, or C, can be interpreted to mean any combination ofA, B, and/or C, such as A, AB, AC, BC, AA, ABC, AAB, AABBCCC, etc.

Further, while certain embodiments have been described using aparticular combination of hardware and software, it should be recognizedthat other combinations of hardware and software are also possible.Certain embodiments may be implemented only in hardware, or only insoftware, or using combinations thereof. In one example, software may beimplemented with a computer program product containing computer programcode or instructions executable by one or more processors for performingany or all of the steps, operations, or processes described in thisdisclosure, where the computer program may be stored on a non-transitorycomputer readable medium. The various processes described herein can beimplemented on the same processor or different processors in anycombination.

Where devices, systems, components or modules are described as beingconfigured to perform certain operations or functions, suchconfiguration can be accomplished, for example, by designing electroniccircuits to perform the operation, by programming programmableelectronic circuits (such as microprocessors) to perform the operationsuch as by executing computer instructions or code, or processors orcores programmed to execute code or instructions stored on anon-transitory memory medium, or any combination thereof. Processes cancommunicate using a variety of techniques, including, but not limitedto, conventional techniques for inter-process communications, anddifferent pairs of processes may use different techniques, or the samepair of processes may use different techniques at different times.

The specification and drawings are, accordingly, to be regarded in anillustrative rather than a restrictive sense. It will, however, beevident that additions, subtractions, deletions, and other modificationsand changes may be made thereunto without departing from the broaderspirit and scope as set forth in the claims. Thus, although specificembodiments have been described, these are not intended to be limiting.Various modifications and equivalents are within the scope of thefollowing claims.

What is claimed is:
 1. A method comprising: increasing a bandgap in anouter region of a semiconductor layer by implanting ions in the outerregion of the semiconductor layer and subsequently annealing the outerregion of the semiconductor layer to intermix the ions with atoms withinthe outer region of the semiconductor layer, wherein: the semiconductorlayer comprises an active light emitting layer, a light outcouplingsurface of the semiconductor layer has a diameter of less than 10 μm,the outer region of the semiconductor layer extends from an outersurface of the semiconductor layer to a central region of thesemiconductor layer that is shaded by a mask during the implanting ofthe ions, and the semiconductor layer further comprises an n-sidesemiconductor layer and a p-side semiconductor layer.
 2. The method ofclaim 1, wherein the ions are implanted from a top surface of the p-sidesemiconductor layer to a depth of approximately 460 nm within thesemiconductor layer.
 3. The method of claim 1, wherein the ions areimplanted from a top surface of the p-side semiconductor layer to adepth within the active light emitting layer.
 4. The method of claim 1,wherein the ions are implanted at an angle between 0° and 7° withrespect to an axis that is normal to a plane of the mask.
 5. The methodof claim 1, wherein the outer region of the semiconductor layer has across-sectional annular shape.
 6. The method of claim 1, wherein themask comprises at least one of a metal, a resist, or a hard mask.
 7. Themethod of claim 6, wherein the metal has a thickness of less than 1000nm, the resist has a thickness of less than 2500 nm, and the hard maskhas a thickness of less than 800 nm.
 8. The method of claim 1, whereinthe ions comprise Al ions.
 9. The method of claim 8, wherein aconcentration of Al in the outer region of the semiconductor layer afterthe Al ions have been implanted is between 0.3 and 0.5.
 10. The methodof claim 8, wherein the ions have an implantation energy ofapproximately 400 keV.
 11. A light-emitting diode comprising: asemiconductor layer comprising an active light emitting layer, wherein:a light outcoupling surface of the semiconductor layer has a diameter ofless than 10 μm, a bandgap in an outer region of the semiconductor layeris greater than a bandgap in a central region of the semiconductorlayer, the outer region of the semiconductor layer comprises ions thatare implanted in the outer region of the semiconductor layer andintermixed with atoms within the outer region of the semiconductorlayer, and the semiconductor layer further comprises an n-sidesemiconductor layer and a p-side semiconductor layer.
 12. Thelight-emitting diode of claim 11, wherein the ions are implanted from atop surface of the p-side semiconductor layer to a depth ofapproximately 460 nm within the semiconductor layer.
 13. Thelight-emitting diode of claim 11, wherein the ions are implanted from atop surface of the p-side semiconductor layer to a depth within theactive light emitting layer.
 14. The light-emitting diode of claim 11,wherein the outer region of the semiconductor layer has across-sectional annular shape.
 15. The light-emitting diode of claim 11,wherein the ions comprise Al ions.
 16. The light-emitting diode of claim15, wherein a concentration of Al in the outer region of thesemiconductor layer is between 0.3 and 0.5.